AON6366E

AON6366E 30V N-Channel AlphaMOS General Description Product Summary • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications VDS ID (at VGS=10V) 30V 34A RDS(ON) (at VGS=10V) < 3.7mΩ RDS(ON) (at VGS=4.5V) < 5.2mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • NB Battery Pack DFN5X6 Top View D Bottom View Top View 1 8 2 7 3 6 4 5 G S PIN1 PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6366E DFN 5X6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0 : November 2015 IAS 30 A EAS 45 mJ VSPIKE 36 V 46 Steady-State Steady-State W 18 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 25 PDSM Junction and Storage Temperature Range A 32 PD TA=25°C V 135 IDSM TA=70°C ±20 34 IDM TA=25°C Units V 34 ID TC=100°C Maximum 30 -55 to 150 Typ 15 40 2.2 www.aosmd.com Max 20 50 2.7 °C Units °C/W °C/W °C/W Page 1 of 6 AON6366E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.4 ±10 µA 1.9 2.4 V 3.0 3.7 4.5 5.5 5.2 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.1 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A Coss Units 30 VDS=30V, VGS=0V IDSS Max mΩ S 1 V 34 A 3020 pF 330 pF 280 pF 2 3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 57 80 nC Qg(4.5V) Total Gate Charge 28 40 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A 1 mΩ nC 9.5 nC Gate Drain Charge 10 nC Turn-On DelayTime 7.5 ns 10 ns 49 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 13 ns IF=20A, di/dt=500A/µs 12 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 20 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZθJC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.7°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 : November 2015 www.aosmd.com Page 4 of 6 AON6366E 50 50 45 45 40 40 35 35 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 15 10 30 25 20 15 10 5 5 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0 : November 2015 www.aosmd.com Page 5 of 6 AON6366E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 : November 2015 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6