AON6370_001

AON6370 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 47A RDS(ON) (at VGS=10V) < 7.2mΩ RDS(ON) (at VGS=4.5V) < 11.5mΩ 100% UIS Tested 100% Rg Tested Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6370 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.01mH VDS Spike Power Dissipation C 10µs TC=25°C B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: September 2017 IAS 40 A EAS 8 mJ VSPIKE 36 V 26 Steady-State Steady-State W 10 6.2 W 4 TJ, TSTG Symbol t ≤ 10s A 18 PDSM TA=70°C A 23 PD TC=100°C V 90 IDSM TA=70°C ±20 29 IDM TA=25°C Continuous Drain Current Units V 47 ID TC=100°C Maximum 30 RθJA RθJC -55 to 150 Typ 15 40 3.8 www.aosmd.com °C Max 20 50 4.8 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.2 V 5.8 7.2 8.7 10.5 9 11.5 mΩ 1 V 30 A 62 VGS=0V, VDS=15V, f=1MHz f=1MHz µA 1.8 0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Coss V 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 0.6 mΩ S 840 pF 330 pF 50 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 nC Qg(4.5V) Total Gate Charge 6.2 nC Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3.5 nC Qgs Gate Source Charge 2.5 nC 3.5 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=20A VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5.5 ns 3 ns 17 ns 3 ns IF=20A, dI/dt=500A/µs 11 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 18 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: September 2017 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 70 4.5V 4V 60 50 50 10V 40 40 ID(A) ID (A) VDS=5V 60 3.5V 30 125°C 25°C 30 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 14 1.8 Qg(10V) Normalized On-Resistance 12 VGS=4.5V 10 RDS(ON) (mΩ) 2 8 6 4 VGS=10V 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 2 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 1.0E+02 ID=20A 1.0E+01 16 125°C 12 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 1.0E-01 1.0E-02 8 25°C 1.0E-03 25°C 4 1.0E-04 0 1.0E-05 2.0 4.0 6.0 8.0 10.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 200 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 TJ(Max)=150°C TC=25°C 10µs 400 100µs DC 1ms 10ms Power (W) 10µs RDS(ON) limited 1.0 0.1 10 500 100.0 Qg(10V) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Coss 400 300 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.00001 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.8°C/W 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: September 2017 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 50 40 Current rating ID(A) Power Dissipation (W) 25 20 15 10 5 30 20 10 0 0 0 25 50 75 100 125 0 150 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: September 2017 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: September 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6