AON6380

AON6380 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 24A RDS(ON) (at VGS=10V) < 6.8mΩ RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6380 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.001mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0 : September 2017 22 60 A EAS 2 mJ VSPIKE 36 V 26 Steady-State Steady-State W 10.5 5 RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 17.5 PD TA=25°C V 88 IDSM TA=70°C ±20 24 IDM TA=25°C Units V 24 ID TC=100°C Maximum 30 -55 to 150 Typ 20 45 3.8 www.aosmd.com °C Max 25 55 4.8 Units °C/W °C/W °C/W Page 1 of 6 AON6380 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.4 ±100 nA 1.8 2.2 V 5.6 6.8 8.1 9.8 10.5 mΩ 1 V 24 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 8.2 gFS Forward Transconductance VDS=5V, ID=20A 40 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=20A Output Capacitance Units 30 VDS=30V, VGS=0V IDSS Coss Max VGS=0V, VDS=15V, f=1MHz mΩ S 825 pF 335 pF 40 f=1MHz pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 25 nC Qg(4.5V) Total Gate Charge 6.2 12 nC Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=20A 0.6 2.2 nC Gate Drain Charge 2.6 nC Qgs Gate Source Charge 2.2 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 20 ns 3 ns ns nC Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs 11 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 17 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0 : September 2017 www.aosmd.com Page 2 of 6 AON6380 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 4V 10V VDS=5V 4.5V 60 3.5V ID (A) ID (A) 60 40 20 40 125°C 25°C 20 VGS=3V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 1.6 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 IS (A) RDS(ON) (mΩ) 15 125°C 10 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0 : September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6380 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=20A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 Coss 400 200 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 10µs RDS(ON) limited 100µs 1ms 10ms DC 1.0 120 90 60 30 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 150 10µs Power (W) ID (Amps) 15 180 100.0 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 5 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.8°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : September 2017 www.aosmd.com Page 4 of 6 AON6380 30 30 25 25 20 20 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 5 15 10 0 5 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : September 2017 www.aosmd.com Page 5 of 6 AON6380 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0 : September 2017 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6