AON6403

AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS -30V ID (at VGS= -10V) -85A RDS(ON) (at VGS= -10V) < 3.1mΩ RDS(ON) (at VGS = -4.5V) < 4.3mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A -280 -21 IDSM TA=70°C ±20 -67 IDM TA=25°C Continuous Drain Current Units V -85 ID TC=100°C Maximum -30 A -17 Avalanche Current C IAR -72 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 259 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: November 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-30V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -280 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS=-10V, ID=-20A -1.7 -2.2 3.1 3.6 4.4 VGS=-4.5V, ID=-20A 3.5 4.3 VDS=-5V, ID=-20A 82 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance µA nA V A 2.6 RDS(ON) Units -0.7 mΩ mΩ S -1 V -85 A 6100 7600 9120 pF 930 1320 1720 pF 630 1050 1470 pF 1 2 4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 130 163 196 nC Qg(4.5V) Total Gate Charge 63 79 95 nC 18 22 26 nC 33 46 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A 20 13 ns VGS=-10V, VDS=-15V, 18 ns RL=0.75Ω, RGEN=3Ω 135 ns 52 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 21 26 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 63 78 32 94 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment . D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using