AON6403L

AON6403L P-Channel Power Transistor General Description The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -85A < 3.1mΩ < 4.3mΩ - RoHS Compliant - Halogen Free 100% UIS Tested 100% Rg Tested D Top View Fits SOIC8 footprint ! G S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C C Maximum -30 ±20 -85 -67 -280 -21 -17 -72 259 83 33 2.3 1.4 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units °C/W °C/W °C/W Rev 1: January 2009 www.aosmd.com Page 1 of 6 AON6403L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 6100 TJ=125°C -1.2 -280 2.6 3.6 3.5 82 -0.7 -1 -85 7600 1320 1050 2 163 79 22 33 13 18 135 52 IF=-20A, dI/dt=500A/µs 21 63 26 78 32 94 9120 1720 1470 4 196 95 26 46 3.1 4.4 4.3 -1.7 Min -30 -1 -5 ±100 -2.2 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 930 630 1 130 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, ID=-20A 63 18 20 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using