AON6405L

AON6405L P-Channel Enhancement Mode Field Effect Transistor General Description The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications. Features VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8mΩ (VGS = -4.5V) ESD Protected! 100% UIS Tested! -RoHS Compliant -Halogen Free Top View Fits SOIC8 footprint ! S S S G D D D D G Rg D DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C S Maximum -30 ±20 -30 -23 -160 -15 -12 -54 146 83 33 2.5 1.6 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25°C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient AD Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 42 1.2 Max 17 50 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6405L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS= ±16V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -0.8 -160 5.5 7 6.1 70 -0.65 -1 -50 4580 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 755 564 160 87 VGS=-10V, VDS=-15V, ID=-20A 41 12.8 17 180 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω IF=-20A, dI/dt=300A/µs 260 1.2 9.7 32 77 40 210 105 5500 7 8.5 8 -1.2 Min -30 -1 -5 ±10 -1.6 Typ Max Units V µA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns µs µs ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(-10V) Total Gate Charge Qg(-4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=300A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using