AON6406

AON6406 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 170A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 2.3mΩ RDS(ON) (at VGS=4.5V) < 3.5mΩ ESD protected 100% UIS Tested 100% Rg Tested Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 Pin 1 PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG VGS TC=25°C TA=25°C Units V ±20 V A 110 IDM 280 25 IDSM TA=70°C Maximum 30 170 ID TC=100°C Pulsed Drain Current C Continuous Drain Current G A 19 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C TC=25°C EAS 180 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1.0: October 2014 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 45 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 110 PD TC=100°C -55 to 150 Typ 14 40 0.85 °C Max 17 55 1.1 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±16V Gate Threshold Voltage VDS=VGS ID=250µA TJ=55°C 5 1.3 10 uA 2.4 V 1.9 2.3 2.8 3.4 3.5 mΩ 1 V 170 A 5200 pF Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.4 gFS Forward Transconductance VDS=5V, ID=20A 130 VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 4300 VGS=0V, VDS=15V, f=1MHz µA 1.8 RDS(ON) TJ=125°C Units V 1 VGS=10V, ID=20A Coss Max mΩ S 720 pF 420 pF 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 70 100 nC Qg(4.5V) Total Gate Charge 33 nC 10 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 1 Qgs Gate Source Charge Qgd Gate Drain Charge 15 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/µs Qrr µ Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 15 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 75 ns 18 ns 30 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using