AON6408L

AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 9.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. A 11.5 IAR 32 A EAR 51 mJ 31 2.4 W 1.5 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 12.5 PDSM TA=70°C A 130 PD TC=100°C V 14.5 IDSM TA=70°C ±20 20 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 25 ID TC=100°C Maximum 30 RθJA RθJC Typ 17 44 3.4 °C Max 21 53 4 Units °C/W °C/W °C/W www.aosmd.com AON6408 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 130 TJ=125°C 5 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ µA ±100 nA 2 2.5 V 5.4 6.5 8.4 10.1 7.5 9.5 mΩ 1 V 31 A A 70 0.75 mΩ S 1270 1590 1900 pF 170 240 310 pF 87 145 200 pF 0.8 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 24 30 36 nC Qg(4.5V) Total Gate Charge 12 15 18 nC 4.2 5.2 6.2 nC 4.7 7.8 11 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 6.7 ns 3.5 ns 22.5 ns 4 ns 22 28 34 19 24 30 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using