AON6410

AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current BJ Units V ±12 V 24 TC=100°C Pulsed Drain Current ID 19 IDM 120 TA=25°C Continuous Drain Current H Maximum 30 A 10 TA=70°C IDSM A 8 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.3mH C TC=25°C EAR 135 mJ Power Dissipation B Power Dissipation A TC=100°C TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case C 2 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 14 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A 35 PD RθJA RθJC Typ 24 53 2.6 °C Max 30 64 3.5 Units °C/W °C/W °C/W www.aosmd.com AON6410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 120 TJ=55°C VGS=10V, ID=20A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 5 VGS=10V, VDS=15V, ID=20A µA 100 nA 1.5 2.5 V 10 12 16 11.5 19 A 14 49 0.72 1210 VGS=0V, VDS=15V, f=1MHz Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS ID(ON) Typ mΩ mΩ S 1.0 V 35 A 1452 pF 330 pF 85 pF 1.1 1.6 Ω 22 28 nC 10 13 nC 3.7 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 10 ns 6.3 ns 21 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 47 Body Diode Reverse Recovery Time 2.8 ns 45 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using