AON6413

AON6413 30V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -32A < 8.5mΩ < 17mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • System/Load Switch, Battery Switch DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 Pin 1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AON6413 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: July 2017 IAS -40 A EAS 80 mJ VSPIKE -36 V 48 Steady-State Steady-State W 19 6.2 RθJA RθJC W 4.0 TJ, TSTG Symbol t ≤ 10s A -17 PDSM TA=70°C A -22 PD TC=100°C V -128 IDSM TA=70°C ±25 -25 IDM TA=25°C Units V -32 ID TC=100°C C Maximum -30 -55 to 150 Typ 15 40 2.1 www.aosmd.com °C Max 20 50 2.6 Units °C/W °C/W °C/W Page 1 of 6 AON6413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=-250µA TJ=125°C ±10 µA -2.1 -2.7 V 6.9 8.5 9.8 12 17 VGS=-4.5V, ID=-10A 12.9 Forward Transconductance VDS=-5V, ID=-16A -47 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) µA -5 -1.6 VGS=-10V, ID=-16A gFS Units -1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S -1 V -32 A 2142 pF 474 pF 363 pF 2.3 4.6 Ω 41 58 nC 18.5 27 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 15 nC Qgd Gate Drain Charge 6 nC tD(on) Turn-On DelayTime 13 ns tr Turn-On Rise Time 12 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=-10V, VDS=-15V, ID=-16A VGS=-10V, VDS=-15V, RL=0.9Ω, RGEN=3Ω 34 ns 18.5 ns IF=-16A, dI/dt=500A/µs 17.5 Body Diode Reverse Recovery Charge IF=-16A, dI/dt=500A/µs 44.5 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.6°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: July 2017 www.aosmd.com Page 4 of 6 AON6413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 50 Power Dissipation (W) 30 Current rating -ID(A) 40 30 20 10 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: July 2017 www.aosmd.com Page 5 of 6 AON6413 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVD SS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0: July 2017 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6