AON6414A

AON6414A 30V N-Channel MOSFET General Description Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 30A RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C G ID V A 30 Pulsed Drain Current C Avalanche Current ±20 50 TC=100°C IDM TA=25°C Continuous Drain Current Units V 30 TC=25°C I Continuous Drain Current Maximum 30 140 13 IDSM TA=70°C C A 10 IAS, IAR 35 A Avalanche energy L=0.05mH C EAS, EAR 31 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.4.0 March 2013 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 -55 to 150 Typ 17 44 3.4 °C Max 21 53 4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 140 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=55°C 5 100 VGS=10V, ID=20A Reverse Transfer Capacitance Rg Gate resistance 2.5 8 11.4 VGS=4.5V, ID=20A 8.2 10.5 VDS=5V, ID=20A 55 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA nA V A 6.6 DYNAMIC PARAMETERS Ciss Input Capacitance Crss 1.95 9.5 TJ=125°C Units V 1 Zero Gate Voltage Drain Current Output Capacitance Max 30 VDS=30V, VGS=0V IDSS Coss Typ 0.72 mΩ mΩ S 1 V 35 A 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=20A 3 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns 3.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/µs µ 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 Body Diode Reverse Recovery Time ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using