AON6414AL

AON6414AL 30V N-Channel MOSFET General Description Product Summary The AON6414AL uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS RDS(ON) (at VGS=10V) 30V 50A < 8mΩ RDS(ON) (at VGS=4.5V) < 10.5mΩ ID (at VGS=10V) 100% UIS Tested 100% Rg Tested D Top View 1 8 2 7 3 6 4 5 G S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TC=25°C Pulsed Drain Current C Continuous Drain Current V A 140 13 IDSM TA=70°C ±20 30 IDM TA=25°C Units V 50 ID TC=100°C Maximum 30 A 10 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C EAS, EAR 36 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 2: May 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD °C -55 to 150 Typ 17 44 3.4 Max 21 53 4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 140 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs µA 100 nA 1.95 2.5 V 6.6 8 9.5 11.4 8.2 10.5 mΩ 1 V 35 A A 55 0.72 mΩ S 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω 16 20 24 nC 7.6 9.5 11.4 nC 2 2.7 3.2 nC 3 5 7 nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) ID(ON) RDS(ON) Typ 6.5 ns 2 ns 17 ns 3.5 ns 7 8.7 10.5 11 13.5 16 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using