AON6440

AON6440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 40V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 3.4mΩ RDS(ON) (at VGS = 4.5V) < 4.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 250 20 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 40 A 15 Avalanche Current C IAR 72 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 259 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: November 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6440 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 40 V VDS=40V, VGS=0V 100 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 250 TJ=55°C 500 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 1.7 2.2 2.8 3.4 4.6 5.5 VGS=4.5V, ID=20A 3.6 4.5 VDS=5V, ID=20A 76 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA nA V A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 85 A 4000 5000 6000 pF 550 780 1000 pF 180 300 420 pF 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 65 81 97 nC Qg(4.5V) Total Gate Charge 32 40 48 nC 11 14 17 nC 15 21 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 9 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13.7 ns 4.5 ns 54 ns 10 ns 13 16 19 30 38 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment . D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using