AON6442

AON6442 40V N-Channel MOSFET General Description Product Summary The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 40V 32A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.8mΩ RDS(ON) (at VGS = 4.5V) < 7mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 168 22 IDSM TA=70°C ±20 25 IDM TA=25°C Units V 32 ID TC=100°C Maximum 40 A 18 Avalanche Current C IAS, IAR 40 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 80 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0 : Dec 2009 4.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2.7 TJ, TSTG Symbol t ≤ 10s W 14 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 35.7 PD TC=100°C -55 to 150 Typ 25 55 2.6 °C Max 30 65 3.5 Units °C/W °C/W °C/W Page 1 of 6 AON6442 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 40 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 168 TJ=55°C µA 5 VDS=0V, VGS=±20V 100 VGS=10V, ID=20A 1.9 2.4 4 4.8 6.2 7.5 VGS=4.5V, ID=15A 5.5 7 VDS=5V, ID=20A 67 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance nA V A RDS(ON) TJ=125°C Units V VDS=40V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 32 A pF 1460 1830 2200 365 521 680 pF 20 43 73 pF 0.4 0.8 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 27.8 35 nC Qg(4.5V) Total Gate Charge 10 12.8 15 nC 3 3.9 5 nC 6 10 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 2 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 7.2 ns 3 ns 23 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 11 16.5 21 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 28 40 52 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using