AON6444L

AON6444L 60V N-Channel MOSFET TM SDMOS General Description Product Summary TM The AON6444L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 60V ID (at VGS=10V) RDS(ON) (at VGS=10V) 81A < 6.5mΩ RDS(ON) (at VGS = 4.5V) < 8mΩ 100% UIS Tested 100% Rg Tested D Top View 1 8 2 3 7 6 4 5 G S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C V A 170 14 IDSM TA=70°C ±20 51 IDM TA=25°C Continuous Drain Current Units V 81 ID TC=100°C Maximum 60 A 11 Avalanche Current C IAR 58 A Repetitive avalanche energy L=0.1mH C EAR 168 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: January 2009 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 83 PD °C -55 to 150 Typ 14 40 1 Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6444L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=60V, VGS=0V 500 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 170 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A Units V 100 TJ=55°C Static Drain-Source On-Resistance Max 60 IGSS RDS(ON) Typ µA 100 nA 2 2.5 V 5.4 6.5 9.6 11.5 6.4 8 mΩ 1 V 81 A A 75 0.7 mΩ S 3800 4800 5800 pF 330 470 610 pF 110 190 270 pF 0.5 1 1.5 Ω 64 80 96 nC 32 40 48 nC 12 15 18 nC 8 14 20 nC VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 13.5 ns 4.2 ns 51 ns 7 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 18 22 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 43 54 65 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using