AON6450

AON6450 100V N-Channel MOSFET SDMOS TM General Description Product Summary VDS The AON6450 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. 100V ID (at VGS=10V) 52A RDS(ON) (at VGS=10V) < 14.5mΩ RDS(ON) (at VGS = 7V) < 17.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 110 9 IDSM TA=70°C ±25 33 IDM TA=25°C Units V 52 ID TC=100°C Maximum 100 A 7 Avalanche Current C IAR 41 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 84 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: May 2011 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 110 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=20A 3.3 12.1 14.5 22.8 27.5 VGS=7V, ID=20A 14 17.5 VDS=5V, ID=20A 52 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.8 VGS=10V, VDS=50V, ID=20A µA nA V A RDS(ON) TJ=125°C Units V VDS=100V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 85 A 3100 pF 2000 2570 170 250 330 pF 50 80 120 pF 0.4 0.8 1.2 Ω 34 43 52 nC 11 14 17 nC 8 13.5 19 nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 15 ns 5 ns 28.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 17 24 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 75 108 140 5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using