AON6482

AON6482 100V N-Channel MOSFET General Description Product Summary The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 28A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 37mΩ RDS(ON) (at VGS = 4.5V) < 42mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 70 5.5 IDSM TA=70°C ±20 18 IDM TA=25°C Units V 28 ID TC=100°C Maximum 100 A 4.4 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev2 : March 2011 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 63 PD TC=100°C -55 to 150 Typ 14.2 42 1.2 www.aosmd.com °C Max 20 50 2 Units °C/W °C/W °C/W Page 1 of 6 AON6482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=10A 2.1 2.7 29 37 59 71 VGS=4.5V, ID=10A 32 42 VDS=5V, ID=10A 45 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance nA V A RDS(ON) TJ=125°C Units V VDS=100V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 60 A pF 1300 1630 2000 70 100 130 pF 30 50 70 pF 0.3 0.75 1.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 26 34 44 nC Qg(4.5V) Total Gate Charge 14 18 22 nC 4 6 8 nC 9 13 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=10A 5 VGS=10V, VDS=50V, RL=5Ω, RGEN=3Ω 7 ns 7 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 22 32 42 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 140 200 260 29 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using