AON6484

AON6484 100V N-Channel MOSFET General Description Product Summary The AON6484 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 12A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 79mΩ RDS(ON) (at VGS = 4.5V) < 90mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 27 3.3 IDSM TA=70°C ±20 7.5 IDM TA=25°C Units V 12.0 ID TC=100°C Maximum 100 A 2.7 Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 10 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Sep 2010 2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 10.0 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25.0 PD TC=100°C Typ 21 50 3.5 °C Max 25 60 5 Units °C/W °C/W °C/W Page 1 of 6 AON6484 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 27 TJ=55°C 5 VGS=10V, ID=7.5A nA 2.2 2.7 V 63.5 79 122 151 90 A Static Drain-Source On-Resistance VGS=4.5V, ID=5A 70 gFS Forward Transconductance VDS=5V, ID=7.5A 34 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=7.5A µA ±100 RDS(ON) Output Capacitance Units V VDS=100V, VGS=0V IDSS Coss Max 0.74 mΩ mΩ S 1 V 25 A 620 778 942 pF 38 55 81 pF 13 24 35 pF 0.7 1.45 2.2 Ω 15 19.4 24 nC 7 9.6 12 nC 2.4 3 3.6 nC 3 5 7 nC VGS=10V, VDS=50V, RL=6.6Ω, RGEN=3Ω 6 ns 2.5 ns 21 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7.5A, dI/dt=500A/µs 16 23 30 Qrr Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=500A/µs 99 142 185 2.4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using