AON6502

AON6502 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) 30V 85A RDS(ON) (at VGS=10V) < 2.2mΩ RDS(ON) (at VGS = 4.5V) < 2.7mΩ 100% UIS Tested Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 334 49 IDSM TA=70°C ±20 66 IDM TA=25°C Units V 85 ID TC=100°C Maximum 30 A 39 Avalanche Current C IAS 70 A Avalanche energy L=0.05mH C EAS 123 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev 1: September 2017 7.4 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 33 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1.1 www.aosmd.com °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6502 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Total Gate Charge Qgs Gate Source Charge 100 nA 1.5 2 V 1.7 2.2 2.2 2.8 2.2 2.7 mΩ 1 V 85 A 85 0.7 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.3 mΩ S 3430 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) µA 5 1 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1327 pF 175 pF 0.7 1.1 Ω 53 64 nC 25 30 nC 7.8 nC Qgd Gate Drain Charge 10.3 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 5.0 ns 33.8 ns tf Turn-Off Fall Time 9.8 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 22 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 58 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: September 2017 www.aosmd.com Page 2 of 6 AON6502 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 60 80 60 ID(A) ID (A) 4.5V 3V 125°C 25°C 40 40 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 5 2 3 4 5 6 Normalized On-Resistance 1.6 4 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 VGS=4.5V 2 VGS=10V 1 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 3 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 1.0E-01 125°C 1.0E-02 2 25°C 1.0E-03 25°C 1 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6502 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=15V ID=20A 4500 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 3500 3000 2500 2000 Coss 1500 1000 500 0 Crss 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10µs RDS(ON) 10.0 10µs 240 100µs 200 1ms DC 10ms 1.0 0.1 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 280 Power (W) ID (Amps) 100.0 5 30 TJ(Max)=150°C TC=25°C 160 120 80 TJ(Max)=150°C TC=25°C 0.0 0.01 40 0.1 1 10 0 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 PD 0.1 Ton T 0.01 1E-05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: September 2017 www.aosmd.com Page 4 of 6 AON6502 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 Current rating ID(A) 100 Power Dissipation (W) 100 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: September 2017 www.aosmd.com Page 5 of 6 AON6502 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 1: September 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6