AON6508

AON6508 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 32A RDS(ON) (at VGS=10V) < 3.2mΩ RDS(ON) (at VGS = 4.5V) < 5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C V 25 A 29 IDSM TA=70°C ±20 128 IDM TA=25°C Continuous Drain Current Units V 32 ID TC=100°C Maximum 30 A 23 IAS 46 A Avalanche energy L=0.05mH C EAS 53 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.2.0: January 2013 4.2 Steady-State Steady-State RθJA RθJC W 2.7 TJ, TSTG Symbol t ≤ 10s W 16 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 41 -55 to 150 Typ 24 53 2.6 www.aosmd.com °C Max 30 64 3 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=20A 3.6 5 mΩ 105 0.7 1 V 48 A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) V 3.2 Forward Transconductance Rg nA 2.2 4.5 VSD Reverse Transfer Capacitance 100 2.6 gFS Crss 1.8 3.6 TJ=125°C VDS=5V, ID=20A Output Capacitance µA 5 1.4 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ VGS=10V, VDS=15V, ID=20A 0.9 mΩ S 2010 pF 898 pF 124 pF 1.8 2.7 Ω 36 49 nC 17 23 nC 6 nC Gate Drain Charge 8 nC Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 4.0 ns 37.0 ns 7.5 ns 14 ns nC 20.3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using