AON6512

AON6512 30V N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) 30V 210A RDS(ON) (at VGS=10V) < 1.7mW RDS(ON) (at VGS = 4.5V) < 2.4mW Application 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C TA=25°C Continuous Drain Current ±20 V A 130 IDM 450 54 IDSM TA=70°C Units V 210 ID TC=100°C Maximum 30 A 43 Avalanche Current C IAS 70 A Avalanche energy L=0.05mH C EAS 123 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2.0: April 2022 AD 7.4 t ≤ 10s Steady-State Steady-State RqJA RqJC W 4.7 TJ, TSTG Symbol A W 45 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case 118 -55 to 150 Typ 14 40 0.8 www.aosmd.com °C Max 17 55 1.05 Units °C/W °C/W °C/W Page 1 of 6 AON6512 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250mA Max 30 Units V VDS=30V, VGS=0V IDSS 1 TJ=55°C 5 mA 100 nA 1.5 2 V 1.4 1.7 1.9 2.3 VGS=4.5V, ID=20A 1.9 2.4 1 VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C mW mW gFS Forward Transconductance VDS=5V, ID=20A 85 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V VSD Diode Forward Voltage IS=85A,VGS=0V 0.87 1.3 V IS Maximum Body-Diode Continuous Current 120 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz S 3430 pF 1327 pF 175 pF 0.7 1.1 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 53 64 nC Qg(4.5V) Total Gate Charge 25 30 nC f=1MHz VGS=10V, VDS=15V, ID=20A 0.3 Qgs Gate Source Charge 7.8 nC Qgd Gate Drain Charge 10.3 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 5.0 ns tD(off) Turn-Off DelayTime 33.8 ns tf trr Turn-Off Fall Time 9.8 ns IF=20A, dI/dt=500A/ms 22 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 58 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using