AON6528

AON6528 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 30A RDS(ON) (at VGS=10V) < 6.3mΩ RDS(ON) (at VGS = 4.5V) < 9.8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View 1 8 2 7 3 6 4 5 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C C ±20 V 23 A 21 IDSM TA=70°C Units V 120 IDM TA=25°C Maximum 30 30 ID TC=100°C Continuous Drain Current G Pin 1 PIN1 Avalanche Current D Top View Bottom View A 16 IAS 36 A Avalanche energy L=0.01mH C EAS 6 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev 2.0: Aug. 2015 4.1 Steady-State Steady-State RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s W 10 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 -55 to 150 Typ 24 53 3.5 www.aosmd.com °C Max 30 64 5 Units °C/W °C/W °C/W Page 1 of 6 AON6528 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=20A µA 5 1.4 0.7 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.8 100 nA 2.2 V 4.5 6.3 6 8.5 7.1 9.8 mΩ 1 V 30 A 91 0.7 mΩ S 1037 pF 441 pF 61 pF 1.5 2.3 Ω 15.5 22 nC 6.8 10 nC 3.0 nC Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 3.3 ns 18 ns 4.3 ns IF=20A, dI/dt=500A/µs 12.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17.2 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using