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AON6558

AON6558

  • 厂商:

    AOSMD(美国万代)

  • 封装:

    SMD8

  • 描述:

    MOSFET N-CH 30V 30A 8DFN

  • 数据手册
  • 价格&库存
AON6558 数据手册
AON6558 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 30A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.1mΩ RDS(ON) (at VGS=4.5V) < 8.2mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View Bottom View D Top View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C V A 120 25 IDSM TA=70°C ±20 24 IDM TA=25°C Continuous Drain Current Units V 30 ID TC=100°C Maximum 30 A 20 IAS 40 A Avalanche energy L=0.01mH C EAS 8 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: August 2013 5 Steady-State Steady-State RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s W 9.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 24 °C -55 to 150 Typ 20 45 4.2 www.aosmd.com Max 25 55 5.2 Units °C/W °C/W °C/W Page 1 of 6 AON6558 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A µA 5 1.4 0.7 Units V 1 TJ=125°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ 1.8 ±100 nA 2.2 V 4.2 5.1 6 7.2 6.5 8.2 62 0.7 mΩ mΩ S 1 V 28 A 1128 pF 435 pF 59 pF 1.4 2.1 Ω 16.2 25 nC 7.4 15 nC 4.3 nC Gate Drain Charge 2.3 nC Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3 ns 22.5 ns 3 ns 13.3 ns nC 25 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.2°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2013 www.aosmd.com Page 4 of 6 AON6558 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 Current rating ID(A) Power Dissipation (W) 30 20 10 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: August 2013 www.aosmd.com Page 5 of 6 AON6558 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: August 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6
AON6558 价格&库存

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AON6558
  •  国内价格 香港价格
  • 3000+1.567863000+0.18739
  • 6000+1.437746000+0.17184
  • 9000+1.371449000+0.16391
  • 15000+1.2969415000+0.15501
  • 21000+1.2528321000+0.14974
  • 30000+1.2099530000+0.14461

库存:50077

AON6558
    •  国内价格
    • 5+2.09985
    • 50+1.66893
    • 150+1.48425
    • 500+1.25378

    库存:2646

    AON6558
    •  国内价格
    • 3+2.66750
    • 25+1.78832
    • 66+1.61583
    • 100+1.60865
    • 180+1.52959
    • 500+1.49605
    • 3000+1.47090

    库存:1202

    AON6558
    •  国内价格 香港价格
    • 1+6.614721+0.79058
    • 10+4.1209210+0.49253
    • 100+2.65912100+0.31782
    • 500+2.02927500+0.24254
    • 1000+1.826101000+0.21826

    库存:50077