AON6702

AON6702 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 2mΩ RDS(ON) (at VGS = 4.5V) < 3mΩ 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 260 26 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 30 A 20 Avalanche Current C IAR 72 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 259 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: November 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 18 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6702 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=1mA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 0.1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 260 TJ=125°C 100 0.1 VGS=10V, ID=20A 1.8 2.4 1.7 2 2.6 3.2 VGS=4.5V, ID=20A 2.4 3 VDS=5V, ID=20A 140 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mA µA V A RDS(ON) TJ=125°C Units mΩ mΩ S 0.7 V 85 A 4720 5900 7080 pF 770 1100 1430 pF 336 560 784 pF 0.2 0.4 0.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 82 103 123 nC Qg(4.5V) Total Gate Charge 41 51 61 nC 14 17 20 nC 23 32 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 14 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17 ns 11 ns 61 ns 27 ns 14 17 20 32 40 48 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment . D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using