AON6718L

AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 80A RDS(ON) < 3.7mΩ RDS(ON) < 5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Fits SOIC8 footprint ! S S S G D Top View D D D D G S SRFET TM Soft Recovery MOSFET : Integrated Schottky Diode DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25°C TA=70°C TC=25°C TC=100°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG Maximum 30 ±20 80 63 210 19 15 40 80 83 33 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 42 1.2 Max 17 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6718L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 2975 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 485 204 0.28 48 VGS=10V, VDS=15V, ID=20A 20 12 6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 10 21 TJ=125°C 1.2 160 3.1 4.3 4.1 87 0.4 1 40 3719 693 340 0.56 60 25 15 10 9.2 10.7 40 12.5 13 26.5 16 32 4463 900 476 0.84 72 30 18 14 3.7 5.2 5 1.8 Min 30 0.025 0.1 20 0.1 2.2 Typ Max Units V mA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power A dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RJC and case to ambient. θ E. The static characteristics in Figures 1 to 6 are obtained using