AON6816

AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 16A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 6.2mΩ RDS(ON) (at VGS = 4.5V) < 9.6mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • DC/DC Converters D1 DFN5X6 EP2 D2 Top View S1 1 8 G1 S2 2 7 3 6 D1 D1 D2 G2 4 5 D2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current ±20 V A 64 16 IDSM TA=70°C Units V 16 IDM TA=25°CG Maximum 30 16 ID TC=100°C S2 A 14 Avalanche Current C IAS 35 A Avalanche energy L=0.05mH C EAS 31 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev1.0: December 2014 2.8 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.8 TJ, TSTG Symbol t ≤ 10s W 8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 21 -55 to 150 Typ 35 65 5 °C Max 45 80 6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=16A µA 5 1.2 0.8 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ ±10 µA 1.8 2.2 V 5 6.2 6.8 8.4 7.5 9.6 mΩ 1 V 16 A 62 0.7 mΩ S 1540 pF 485 pF 448 pF 1.7 2.6 Ω 33.4 45 nC 19.7 27 nC 3.3 nC Gate Drain Charge 15.0 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 8.3 ns 24 ns tf Turn-Off Fall Time 10 ns trr Body Diode Reverse Recovery Time Qrr IF=16A, dI/dt=500A/µs 15.2 Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs 22.2 ns nC VGS=10V, VDS=15V, RL=0.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using