AON6980
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
Q1
30V
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Applications
Q2
30V
ID (at VGS=10V)
28A
36A
RDS(ON) (at VGS=10V)
< 6.8mΩ
< 3.8mΩ
RDS(ON) (at VGS=4.5V)
< 10.3mΩ
< 4.9mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Top View
DFN5X6B
Top View
Bottom View
Bottom View
PIN1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6980
DFN 5x6B
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Pulsed Drain Current C
TA=25°C
Continuous Drain
Avalanche Current
±20
±12
V
28
36
Avalanche energy
L=0.01mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
18
27
14
21
IAS
51
60
A
EAS
13
18
mJ
V
VSPIKE
PD
TA=25°C
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
28
144
IDSM
C
Steady-State
Steady-State
36
36
23.5
32
9.4
13
3.5
4.1
2.2
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
22
111
IDM
TA=70°C
Rev.1.0: January 2014
Units
V
ID
TC=100°C
Current
Max Q2
30
VGS
TC=25°C
Continuous Drain
Current G
Max Q1
30
RθJA
RθJC
A
W
W
-55 to 150
Typ Q1
29
55
4.3
www.aosmd.com
Typ Q2
25
50
3
Max Q1
35
66
5.3
°C
Max Q2
30
60
3.8
Units
°C/W
°C/W
°C/W
Page 1 of 10
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
5
1.4
VGS=10V, ID=20A
±100
nA
2.2
V
5.6
6.8
8
9.6
10.3
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
8.2
gFS
Forward Transconductance
VDS=5V, ID=20A
71
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
0.1
µA
1.8
RDS(ON)
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
28
A
1095
pF
270
pF
28
pF
0.5
Ω
1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14.6
22
nC
Qg(4.5V) Total Gate Charge
6.4
10
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
3.4
nC
Qgd
Gate Drain Charge
2
nC
tD(on)
Turn-On DelayTime
8
ns
15.2
ns
17.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
2.4
ns
IF=20A, dI/dt=500A/µs
11
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
24
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
1E-05 0.0001 0.001 0.01
100
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.3°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2014
www.aosmd.com
Page 4 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Power Dissipation (W)
30
30
Current rating ID(A)
20
10
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TJ(Max)=150°C
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=66°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.0001
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: January 2014
www.aosmd.com
Page 5 of 10
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=10mA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
0.5
TJ=55°C
100
1.2
VGS=10V, ID=20A
±100
nA
2
V
3.1
3.8
4.2
5.1
4.9
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
3.9
gFS
Forward Transconductance
VDS=5V, ID=20A
160
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.44
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
mA
1.6
RDS(ON)
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
mΩ
S
0.6
V
36
A
3440
pF
515
pF
60
pF
0.7
1.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
51
70
nC
Qg(4.5V) Total Gate Charge
21
30
nC
Qgs
Gate Source Charge
Qgd
f=1MHz
VGS=10V, VDS=15V, ID=20A
0.3
8.7
nC
Gate Drain Charge
3.7
nC
tD(on)
Turn-On DelayTime
8.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
3
ns
34
ns
3
ns
IF=20A, dI/dt=500A/µs
15.7
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
31.8
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.8°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2014
www.aosmd.com
Page 8 of 10
40
40
30
30
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TJ(Max)=150°C
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: January 2014
www.aosmd.com
Page 9 of 10
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: January 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 10 of 10
