AON7140

AON7140 40V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) 40V 148A RDS(ON) (at VGS=10V) < 2.3mΩ RDS(ON) (at VGS=4.5V) < 3.5mΩ VDS Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring switches DFN 3.3x3.3 Top View D Bottom View Top View Pin 1 S S S 1 8 D 2 7 3 6 D D G 4 5 D G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7140 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C TA=25°C Continuous Drain Current Avalanche energy VDS Spike I Power Dissipation B L=0.3mH C 10μs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.2.0: May 2020 IAS 30 A EAS 135 mJ VSPIKE 48 V 89 AD t ≤ 10s Steady-State Steady-State W 35 4.1 RqJA RqJC W 2.6 TJ, TSTG Symbol A A 25.5 PDSM TA=70°C A 31.5 PD TC=100°C V 550 IDSM Avalanche Current C ±20 93 IDM TA=70°C Units V 148 ID TC=100°C Maximum 40 -55 to 150 Typ 25 50 -- www.aosmd.com Max 30 60 1.4 °C Units °C/W °C/W °C/W Page 1 of 6 AON7140 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 40 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.85 2.4 V 1.9 2.3 3.0 3.7 3.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.7 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.67 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 5 1.4 VGS=0V, VDS=20V, f=1MHz Units V VDS=40V, VGS=0V IDSS Coss Max mΩ mΩ S 1 V 100 A 3350 pF 580 pF 65 pF 0.85 1.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 42 60 nC Qg(4.5V) Total Gate Charge 18 26 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=20V, ID=20A 0.4 11.5 nC Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 9 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime 34 ns tf trr Turn-Off Fall Time 3 ns IF=20A, di/dt=500A/ms 16 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 42 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=20V, RL=1.0W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=1.4°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: May 2020 www.aosmd.com Page 4 of 6 AON7140 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 200 80 Current rating ID (A) Power Dissipation (W) 150 60 40 20 100 50 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 RqJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: May 2020 www.aosmd.com Page 5 of 6 AON7140 Figure A: Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0: May 2020 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6