AON7264E

AON7264E 60V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • ESD protected 60V 28A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 9.5mΩ RDS(ON) (at VGS=4.5V) < 13.3mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • High efficiency power supply • Secondary synchronous rectifier Top View DFN 3x3 EP Bottom View D Top View PIN1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7264E DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike I L=0.3mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: April 2017 17 17 A EAS 43 mJ 72 V 27.5 5.0 Steady-State RθJA RθJC W 3.2 TJ, TSTG Symbol Steady-State W 11 PDSM t ≤ 10s A IAS PD Junction and Storage Temperature Range A 13.5 VSPIKE TA=25°C V 80 IDSM TA=70°C ±20 25 IDM TA=25°C Units V 28 ID TC=100°C Maximum 60 -55 to 150 Typ 20 45 3.7 www.aosmd.com Max 25 55 4.5 °C Units °C/W °C/W °C/W Page 1 of 6 AON7264E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 60 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=17A ±10 µA 1.8 2.4 V 7.7 9.5 12.5 15.5 10.3 13.3 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=17A 52 VSD Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current G TJ=125°C VGS=4.5V, ID=15A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) µA 5 1.4 0.6 Units V VDS=60V, VGS=0V IDSS Max mΩ mΩ S 1 V 28 A 1100 pF 300 pF 28 pF 1.2 2.0 Ω 14.5 25 nC 7 13 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=17A VGS=10V, VDS=30V, RL=1.75Ω, RGEN=3Ω 3.5 ns 22 ns 3 ns IF=17A, di/dt=500A/µs 19 Body Diode Reverse Recovery Charge IF=17A, di/dt=500A/µs 65 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W 1 Single Pulse 0.1 PDM Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: April 2017 www.aosmd.com Page 4 of 6 AON7264E 40 40 30 30 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: April 2017 www.aosmd.com Page 5 of 6 AON7264E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: April 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6