AON7318

AON7318 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 50A RDS(ON) (at VGS=10V) < 1.95mΩ RDS(ON) (at VGS=4.5V) < 3.1mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Top View DFN 3.3x3.3 EP Bottom View PIN 1 D Top View S S 1 8 D 2 7 S G 3 6 4 5 D D D G S PIN 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7318 DFN3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: September 2017 IAS 60 A EAS 18 mJ 39 Steady-State Steady-State W 15.5 4.1 RqJA RqJC W 2.6 TJ, TSTG Symbol t ≤ 10s A 29 PDSM TA=70°C A 36.5 PD TA=25°C A V 190 IDSM TA=70°C ±20 50 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 25 50 2.6 www.aosmd.com Max 30 60 3.2 °C Units °C/W °C/W °C/W Page 1 of 6 AON7318 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 1.1 2.25 2.85 3.1 VGS=4.5V, ID=20A 2.45 Forward Transconductance VDS=5V, ID=20A 125 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current Output Capacitance G Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=20A 0.3 mΩ mΩ S 1 V 50 A 2840 pF 740 pF 80 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) V 2.3 1.95 gFS DYNAMIC PARAMETERS Ciss Input Capacitance nA 1.7 Static Drain-Source On-Resistance TJ=125°C ±100 1.55 RDS(ON) Coss μA 5 VGS=10V, ID=20A Units V VDS=30V, VGS=0V IDSS Max pF 0.7 1.1 Ω 37 52 nC 16.5 24 nC 8.5 nC 4 nC 8 ns 3.5 ns 28 ns 4 ns IF=20A, di/dt=500A/ms 15.5 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 36.5 ns nC VGS=10V, VDS=15V, RL=0.75W, RGEN=3W A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. IAS is limited by test finger. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=3.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2017 www.aosmd.com Page 4 of 6 AON7318 Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 50 50 Current rating ID (A) 40 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2017 www.aosmd.com Page 5 of 6 AON7318 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: July 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6