AON7400B

AON7400B 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 30A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 7.5mΩ RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G Pin 1 S Orderable Part Number Package Type Form Minimum Order Quantity AON7400B DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Pulsed Drain Current TA=25°C VDS Spike L=0.1mH C 100ns TC=25°C Power Dissipation B IDM 84 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2013 18 27 A EAS 36 mJ VSPIKE 36 V 24 Steady-State Steady-State W 9.5 4.1 RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 14.5 PD TC=100°C TA=25°C Power Dissipation A V 30 G 23 G IDSM TA=70°C Avalanche Current C Avalanche energy ±20 ID TC=100°C C Continuous Drain Current Units V 40 I TC=25°C Continuous Drain Current Maximum 30 °C -55 to 150 Typ 24 47 4.2 www.aosmd.com Max 30 60 5.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.5 ±100 nA 1.95 2.5 V 6.2 7.5 9.4 11.3 10.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A 8.4 gFS Forward Transconductance VDS=5V, ID=18A 60 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=18A Coss Units 30 VDS=30V, VGS=0V IDSS Max 0.72 mΩ mΩ S 1 V 28 A 960 1200 1440 pF 125 180 235 pF 65 110 155 pF 1.4 Ω 0.4 0.9 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 18.5 26 nC Qg(4.5V) Total Gate Charge 4 8.5 15 nC 1 3 8 nC 2 4 10 nC VGS=10V, VDS=15V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=18A, dI/dt=500A/µs 6 10 14 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 9 15.5 22 Body Diode Reverse Recovery Time 5.5 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω ns 3.5 ns 21.5 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.2°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 25 Power Dissipation (W) 30 Current rating ID(A) 20 15 10 20 10 5 0 0 0 25 50 75 100 125 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TJ(Max)=150°C TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 1E-05 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6