AON7401L

AON7401 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7401/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7401 and AON7401L are electrically identical. -RoHS Compliant -AON7401L is Halogen Free Features VDS (V) = -30V (VGS = -10V) ID = -9A RDS(ON) < 14mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current Power Dissipation Power Dissipation B C Maximum -30 ±25 -20 -20 -80 -9 -7 27 11 1.6 1 -55 to 150 Units V V TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C A ID IDM IDSM PD PDSM TJ, TSTG A W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 4 Max 40 75 4.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-10A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -1.7 -80 11 14 28 27 -0.7 -1 -3 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 370 295 2.4 30 VGS=-10V, VDS=-15V, ID=-9A 4.6 10 11 VGS=-10V, VDS=-15V, RL=1.6Ω, RGEN=3Ω IF=-9A, dI/dt=500A/µs 9.4 24 12 14 35 18 3.6 39 2600 14 17 36 S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC mΩ -2.2 Min -30 -1 -5 ±100 -3 Typ Max Units V µA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/µs A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using