AON7403L_001

AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) -30V -29A RDS(ON) (at VGS=-10V) < 18mW RDS(ON) (at VGS=-5V) < 36mW 100% UIS Tested DFN 3x3_EP Bottom View Top View D Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A -80 -11 IDSM TA=70°C ±25 -18 IDM TA=25°C Units V -29 ID TC=100°C Maximum -30 A -8.5 Avalanche Current C IAR 24 A Repetitive avalanche energy L=0.1mH C EAR 29 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.4.0: November. 2013 4.1 Steady-State Steady-State RqJA RqJC www.aosmd.com W 2.6 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 25 PD TC=100°C -55 to 150 Typ 22 47 4.2 °C Max 30 60 5 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 Typ -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=-250mA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 TJ=55°C VGS=-10V, ID=-8A -5 100 nA -3 V 14 18 20 25 36 A Static Drain-Source On-Resistance VGS=-5V, ID=-5A 26 gFS Forward Transconductance VDS=-5V, ID=-8A 20 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1130 VGS=0V, VDS=-15V, f=1MHz mA -2.2 RDS(ON) TJ=125°C Units V VDS=-30V, VGS=0V IDSS Coss Max mW mW S -1 V -22 A 1400 pF 240 pF 155 pF VGS=0V, VDS=0V, f=1MHz 5.8 8 W 18 24 nC VGS=-10V, VDS=-15V, ID=-8A 5.5 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 3.3 nC tD(on) Turn-On DelayTime 8.7 ns tr Turn-On Rise Time 8.5 ns tD(off) Turn-Off DelayTime 18 ns tf trr Turn-Off Fall Time 7 ns IF=-8A, dI/dt=500A/ms 12 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/ms 26 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.8W, RGEN=3W 16 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using