AON7404

AON7404 20V N-Channel MOSFET General Description Product Summary The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 20A RDS(ON) (at VGS=4.5V) < 6mΩ RDS(ON) (at VGS=2.5V) < 7.5mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3_EP Bottom View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 160 20 IDSM TA=70°C ±12 31 IDM TA=25°C Continuous Drain Current Units V 40 ID TC=100°C Maximum 20 A 16 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 162 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: Mar. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 16 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 40 PD -55 to 150 Typ 30 60 2.6 °C Max 40 75 3.1 Units °C/W °C/W °C/W Page 1 of 6 AON7404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 20 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 160 TJ=55°C VDS=0V, VGS= ±12V 100 1 6 6.2 7.4 VGS=2.5V, ID=18A 5.8 7.5 mΩ VDS=5V, ID=20A 105 1 V 40 A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance V 4.9 Static Drain-Source On-Resistance Output Capacitance 1.6 nA A RDS(ON) Coss µA 5 VGS=4.5V, ID=20A Units V VDS=20V, VGS=0V IDSS Crss Max VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=10V, VDS=10V, ID=20A mΩ S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 nC 7 9 11 nC 7 12 17 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 17 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 29 36 43 VGS=10V, VDS=10V, RL=0.56Ω, RGEN=3Ω 7 ns 8 ns 70 ns 18 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum avalanche current limited by tester capability. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using