AON7404G

AON7404G 20V N-Channel MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant ID (at VGS=4.5V) 20V 20A RDS(ON) (at VGS=4.5V) < 5.3mΩ RDS(ON) (at VGS=2.5V) < 6.8mΩ VDS Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Battery protection switch Top View DFN 3x3_EP Bottom View D Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G Pin 1 S Orderable Part Number Package Type Form Minimum Order Quantity AON7404G DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: August 2017 IAS 40 A EAS 80 mJ 28 Steady-State Steady-State W 11 5 RqJA RqJC W 3.2 TJ, TSTG Symbol t ≤ 10s A 20 PDSM TA=70°C A 20 PD TA=25°C A V 80 IDSM TA=70°C ±12 20 IDM TA=25°C Continuous Drain Current G Units V 20 ID TC=100°C Maximum 20 -55 to 150 Typ 20 45 3.7 www.aosmd.com Max 25 55 4.5 °C Units °C/W °C/W °C/W Page 1 of 6 AON7404G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ 20 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=4.5V, ID=20A ±100 nA 0.85 1.25 V 4.4 5.3 5.9 7.2 6.8 RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=18A 5.4 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.6 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=4.5V, VDS=10V, ID=20A μA 5 0.45 1.2 Units V VDS=20V, VGS=0V IDSS Max mΩ mΩ S 1 V 20 A 3300 pF 485 pF 370 pF 2.4 3.6 Ω 31 45 nC 5.2 nC Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 15 ns tD(off) Turn-Off DelayTime 72 ns tf trr Turn-Off Fall Time 21 ns IF=20A, di/dt=500A/ms 17 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 30 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=10V, RL=0.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=4.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2017 www.aosmd.com Page 4 of 6 AON7404G TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 24 Current rating ID (A) Power Dissipation (W) 30 20 10 18 12 0 6 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: August 2017 www.aosmd.com Page 5 of 6 AON7404G Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6