AON7406

AON7406 N-Channel Enhancement Mode Field Effect Transistor General Description The AON7406 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7406 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V (VGS = 10V) ID = 11A RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 23.5mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Continuous Drain Current G Power Dissipation Power Dissipation B C Maximum 30 ±20 20 20 50 11 8.8 27 11 3.1 2 -55 to 150 Units V V TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C A ID IDM IDSM PD PDSM TJ, TSTG A W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 4 Max 40 75 4.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=11A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8.5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 50 12.5 17.5 19 19 0.73 1 3 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.5 17 VGS=10V, VDS=15V, ID=10A 9 3.4 4.7 5 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω IF=11A, dI/dt=100A/µs 6 19 4.5 19 9 25 0.85 24 12 1200 15 21 23.5 S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC mΩ 1.6 Min 30 1 5 ±100 3 Typ Max Units V µA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using