AON7407

AON7407 20V P-Channel MOSFET General Description Product Summary The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS -20V ID (at VGS=-4.5V) -40A RDS(ON) (at VGS =-4.5V) < 9.5mΩ RDS(ON) (at VGS =-2.5V) < 12.5mΩ RDS(ON) (at VGS =-1.8V) < 18mΩ 100% UIS Tested 100% Rg Tested DFN 3x3_EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Continuous Drain Current V A -29 -14.5 IDSM TA=70°C ±8 -100 IDM TA=25°C Units V -40 ID TC=100°C Maximum -20 A -11.5 Avalanche Current C IAS, IAR -40 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 80 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 0: June 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 12 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 29 PD -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W Page 1 of 6 AON7407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±8V Gate Threshold Voltage VDS=VGS, ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -100 TJ=55°C ±100 VGS=-2.5V, ID=-13A 9.3 12.5 mΩ VGS=-1.8V, ID=-11A 11.4 18 mΩ -1 V -35 A Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance VGS=0V, VDS=-10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr Turn-Off Fall Time 72 -0.52 S 3495 4195 pF 365 528 690 pF 255 425 595 pF 2.8 5.6 Ω 44 53 nC 35 VGS=-4.5V, VDS=-10V, ID=-14A VGS=-4.5V, VDS=-10V, RL=0.75Ω, RGEN=3Ω 9 nC 11 nC 18 ns 32 ns 136 ns 59 IF=-14A, dI/dt=500A/µs Body Diode Reverse Recovery Time I Body Diode Reverse Recovery Charge F=-14A, dI/dt=500A/µs mΩ 2795 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs V A 13.5 VSD Rg nA 10.5 TJ=125°C VDS=-5V, ID=-14A Reverse Transfer Capacitance -0.9 9.5 Forward Transconductance Crss -0.55 7.6 gFS Output Capacitance µA -5 VGS=-4.5V, ID=-14A Coss Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 26 80 33 100 ns 40 120 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using