AON7408

AON7408 30V N-Channel MOSFET General Description Product Summary • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in general purpose applications. VDS 30V 18A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 20mΩ RDS(ON) (at VGS=4.5V) < 32mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested D DFN 3x3 EP Bottom View Top View Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Rev.8.0: November 2013 11 Steady-State Steady-State W 4.5 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 8 PDSM TA=70°C A 10 PD TC=100°C V 64 IDSM TA=70°C ±20 11.5 IDM TA=25°C Units V 18 ID TC=100°C Maximum 30 -55 to 150 Typ 25 62 8.8 °C Max 40 75 11 Units °C/W °C/W °C/W Page 1 of 6 AON7408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 ±100 nA 2.1 2.6 V 15.3 20 23.3 30 VGS=4.5V, ID=5A 22.7 32 mΩ 17 1 V 12 A VGS=10V, ID=10A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance 373 VGS=0V, VDS=15V, f=1MHz Gate Source Charge Qgd tD(on) 448 67 VGS=4.5V, VDS=15V, ID=10A 0.6 mΩ S pF pF 41 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs A 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ pF 1.8 2.8 7.1 8.6 Ω nC 1.2 nC Gate Drain Charge 1.6 nC Turn-On DelayTime 4.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 10.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 4.5 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2.8 ns 15.8 ns 3 ns 12.6 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using