AON7409

AON7409 30V P-Channel MOSFET General Description Product Summary • The AON7409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) • RoHS and Halogen-Free Compliant. VDS -30V -32A RDS(ON) (at VGS=-10V) < 8.5mΩ RDS(ON) (at VGS =-4.5V) < 17mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A -128 -16 IDSM TA=70°C ±25 -25 IDM TA=25°C Units V -32 ID TC=100°C Maximum -30 A -12.5 Avalanche Current C IAS 40 A Avalanche energy L=0.1mH C TC=25°C EAS 80 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2.0: July 2017 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 38.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 96 PD TC=100°C -55 to 150 Typ 30 60 1 °C Max 40 75 1.3 Units °C/W °C/W °C/W Page 1 of 6 AON7409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=-250µA -1.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -128 ±10 uA V 6.8 8.5 9.6 11.5 VGS=-4.5V, ID=-10A 12.8 17 mΩ -1 V -32 A TJ=125°C A gFS Forward Transconductance VDS=-5V, ID=-16A -43 VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=-10V, VDS=-15V, ID=-16A 2142 pF 474 pF 2.3 pF 4.6 Ω 41 58 nC 18.5 27 nC 15 nC 6 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-16A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=-16A, dI/dt=500A/µs 44.5 VGS=-10V, VDS=-15V, RL=0.9Ω, RGEN=3Ω mΩ S 363 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) µA -2.7 Static Drain-Source On-Resistance Output Capacitance Units -2.1 VGS=-10V, ID=-16A Coss Max V VDS=-30V, VGS=0V VGS(th) RDS(ON) Typ 13 ns 12 ns 34 ns 18.5 ns 17.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using