AON7410_106

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V ID = 24A RDS(ON) < 20mΩ RDS(ON) < 26mΩ RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View (VGS = 10V) (VGS = 10V) (VGS = 4.5V) D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Orderable Part Number Package Type Form Minimum Order Quantity AON7410 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Maximum 30 Units V Gate-Source Voltage VGS ±20 V ID 15 TC=25°C Continuous Drain Current B TC=100°C Pulsed Drain Current C 24 IDM Continuous Drain A Current TA=70°C A 50 TA=25°C 9.5 IDSM 7.7 Avalanche Current C IAS, IAR 17 A Repetitive avalanche energy L=0.1mH C EAS, EAR 14 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case Rev.12.0: August 2014 B 20 PD 8.3 PDSM 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 3.1 RθJA RθJC www.aosmd.com Typ 30 60 5 °C Max 40 75 6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 50 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current TJ=55°C 5 ±100 VGS=10V, ID=8A Reverse Transfer Capacitance Rg Gate resistance 20 VGS=4.5V, ID=7A 21 26 VDS=5V, ID=8A 30 IS=1A,VGS=0V 0.75 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=10V, VDS=15V, ID=8A nA V mΩ S 1 V 20 A 440 550 660 pF 77 110 143 pF 33 55 77 pF 3 4 4.9 Ω 7.8 9.8 12 nC 3.6 4.6 5.5 nC 1.4 1.8 2.2 nC 1.3 2.2 3 nC 5 VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A, dI/dt=500A/µs 7 9 11 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 12 15 18 Body Diode Reverse Recovery Time µA A 29 SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge 2.5 16 DYNAMIC PARAMETERS Input Capacitance Ciss Crss 1.8 24 TJ=125°C Units V 1 Zero Gate Voltage Drain Current Output Capacitance Max 30 VDS=30V, VGS=0V IDSS Coss Typ 3.2 ns 24 ns 6 ns ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using