AON7422

AON7422 N-Channel Enhancement Mode Field Effect Transistor General Description The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 4.6mΩ < 6mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 Top View Bottom View D Top View S S S G D D D D Pin 1 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 32 25 150 15 11 47 110 35 14 1.7 1 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3 Max 40 75 3.5 Units °C/W °C/W °C/W Rev 0: February 2009 www.aosmd.com Page 1 of 6 AON7422 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 260 150 0.5 35 VGS=10V, VDS=15V, ID=20A 16 5.6 5.4 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 9 21 Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 1.2 150 3.8 5.3 4.7 100 0.68 1 40 2400 370 245 1 44 20 7 9 8 9 36 9 12 26 14 31 2900 480 340 1.5 53 24 8.4 12.6 4.6 6.4 6 1.75 Min 30 1 5 100 2.3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using