AON7426

AON7426 30V N-Channel MOSFET General Description Product Summary The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) RoHS and Halogen-Free Compliant VDS 30V 40A RDS(ON) (at VGS=10V) < 5.5mΩ RDS(ON) (at VGS =4.5V) < 8mΩ Typical ESD protection HBM Class 3A 100% UIS Tested 100% Rg Tested DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 130 18 IDSM TA=70°C ±20 31 IDM TA=25°C Units V 40 ID TC=100°C Maximum 30 A 14 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev. 3.0: May 2015 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 12 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 29 PD TC=100°C -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W Page 1 of 6 AON7426 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.35 ID(ON) On state drain current VGS=10V, VDS=5V 130 TJ=55°C 10 µA 1.85 2.35 V 4.5 5.5 7.2 8.8 VGS=4.5V, ID=14A 5.8 8 mΩ 1 V 35 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=18A 75 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=18A Coss Units V 1 IDSS RDS(ON) Max mΩ S 1410 1765 2120 pF VGS=0V, VDS=15V, f=1MHz 195 283 370 pF 90 155 220 pF VGS=0V, VDS=0V, f=1MHz 1.3 2.6 3.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 26 33 40 nC Qg(4.5V) Total Gate Charge 12.5 16 19.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=18A VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 5.2 nC 6.2 nC 6 ns 4 ns 33 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs 9.5 12.3 15 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 20 25 30 7.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using