AON7442

AON7442 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 50A RDS(ON) (at VGS=10V) < 1.9mΩ RDS(ON) (at VGS = 4.5V) < 3.3mΩ 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG VGS TC=25°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH VDS Spike C 100ns TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: January 2016 IAS 66 A EAS 109 mJ VSPIKE 36 V 83 Steady-State Steady-State W 33 6.2 RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s A 35 PDSM TA=70°C A 44 PD TC=100°C V 200 IDSM TA=70°C ±20 39 IDM TA=25°C Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7442 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge 1.9 3.3 mΩ 1 V 50 A VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.4 mΩ S 2994 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 2.9 0.7 Diode Forward Voltage nA 2.2 1.5 153 Forward Transconductance VSD 100 2.3 2.4 gFS Output Capacitance 1.8 VGS=4.5V, ID=20A VDS=5V, ID=20A µA 5 1.2 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1276 pF 196 pF 0.9 1.4 Ω 47.7 65 nC 23 31 nC 7.6 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 10.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 7.5 ns 30.8 ns 8.8 ns IF=20A, dI/dt=500A/µs 20 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 46 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using