AON7446

AON7446 60V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7446 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 60V 8A RDS(ON) (at VGS=10V) < 145mΩ RDS(ON) (at VGS = 7V) < 160mΩ 100% UIS Tested 100% Rg Tested DFN 3x3_EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 17 3.3 IDSM TA=70°C ±20 5 IDM TA=25°C Units V 8 ID TC=100°C Maximum 60 A 2.7 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 5 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: Mar. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 7 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 16.7 PD TC=100°C -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W Page 1 of 7 AON7446 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 10 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.2 VGS=10V, VDS=5V 17 TJ=55°C 50 100 nA 3.3 V 113 145 197 237 VGS=7V, ID=2.5A 118 160 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=3A 7.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr µA 2.7 VGS=10V, ID=3A Crss Units V VDS=60V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 60 IDSS ID(ON) Typ VGS=10V, VDS=30V, ID=3A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs mΩ S 1 V 15 A 285 pF 190 237 17 25 33 pF 5 9 13 pF 0.7 1.4 2.1 Ω 3.5 4.4 5.3 nC 0.7 0.9 1.1 nC 0.7 1.1 1.6 nC VGS=10V, VDS=30V, RL=10Ω, RGEN=3Ω IF=3A, dI/dt=500A/µs mΩ 4.5 ns 1.5 ns 15 ns 1.5 ns 5.4 7.7 10 9 13 17 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using