AON7460

AON7460 300V,4A N-Channel MOSFET General Description Product Summary The AON7460 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 350V@150℃ ID (at VGS=10V) 4A RDS(ON) (at VGS=10V) < 0.83Ω 100% UIS Tested! 100% Rg Tested! Top View DFN 3x3A_EP Bottom View Top View D S S D D S G D D G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C V A 13 1.2 IDSM TA=70°C ±30 2.5 IDM TA=25°C Continuous Drain Current Units V 4 ID TC=100°C C Maximum 300 A 1.0 IAR 2.1 A Repetitive avalanche energy C EAR 66 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C EAS dv/dt 132 5 33 mJ V/ns W 13 W Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: Mar 2011 3.1 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 -50 to 150 Typ 30 60 3.1 °C Max 40 75 3.7 Units °C/W °C/W °C/W Page 1 of 6 AON7460 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V, ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.3 V/ oC VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 µA ±100 3.3 3.9 4.5 nΑ V 0.83 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.2A 0.67 gFS Forward Transconductance VDS=40V, ID=1.2A 2 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4 A ISM Maximum Body-Diode Pulsed Current 13 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz S 0.76 240 310 380 pF 30 45 60 pF 3.0 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge pF 1.4 2.9 4.5 Ω 5.4 6.8 8.2 nC VGS=10V, VDS=240V, ID=1.2A Qgs Gate Source Charge 1.9 nC Qgd Gate Drain Charge 2.0 nC tD(on) Turn-On DelayTime 17 ns tr Turn-On Rise Time 8 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=1.2A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time VGS=10V, VDS=150V, ID=1.2A, RG=25Ω IF=1.2A,dI/dt=100A/µs,VDS=100V 29 ns 12 ns 60 88 120 0.20 0.29 0.40 ns µC A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using