AON7466

AON7466 30V N-Channel MOSFET General Description Product Summary • The AON7466 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V 30A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.5mΩ RDS(ON) (at VGS = 4.5V) < 10.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 100 15 IDSM TA=70°C ±25 23 IDM TA=25°C Units V 30 ID TC=100°C Maximum 30 A 12 Avalanche Current C IAS 27 A Avalanche energy L=0.1mH C EAS 36 mJ VDS Spike VSPIKE 36 V Power Dissipation B 10µs TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2.0: August 2014 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 -55 to 150 Typ 30 60 4.2 °C Max 40 75 5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A µA 5 1.5 0.55 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.97 500 nA 2.5 V 6.2 7.5 9.4 11.3 8.4 10.5 mΩ 1 V 30 A 55 0.7 mΩ S 1150 pF 180 pF 105 pF 1.1 1.65 Ω 20 30 nC 9.5 16 nC 2.7 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 2 ns 17 ns 3.5 ns IF=20A, dI/dt=500A/µs 8.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13.5 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 30 10µs RDS(ON) limited DC 10 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 Power (W) 10.0 5 200 1000.0 ID (Amps) Crss 0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2.0: August 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 25 Current rating ID(A) Power Dissipation (W) 30 20 15 10 30 20 10 5 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) TCASE (°C) Figure 13: Power De-rating (Note F) 10000 TA=25°C Power (W) 1000 17 5 2 10 100 10 1 0.00001 0 1000 18 0.001 0.1 10 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 2.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6