AON7506

AON7506 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 12A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 15.8 mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain CurrentG C V A 48 12 IDSM TA=70°C ±20 9.4 IDM TA=25°C Units V 12 ID TC=100°C Maximum 30 A 10.5 Avalanche Current C IAS 20 A Avalanche energy L=0.05mH C EAS 10 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0 : July 2012 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 20.5 -55 to 150 Typ 30 60 5 www.aosmd.com °C Max 40 75 6 Units °C/W °C/W °C/W Page 1 of 6 AON7506 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 30 TJ=55°C TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=12A ±100 nA 2.3 V 8 9.8 11 13.5 13 15.8 mΩ 1 V 12 A 45 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 1.8 1 mΩ S 0.73 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA 5 1.3 Units V 1 VGS=10V, ID=12A Output Capacitance Max VDS=30V, VGS=0V IDSS Coss Typ 542 pF 233 pF 31 pF 2 3 Ω 9 12.2 nC 4.3 5.8 nC 2.2 nC Gate Drain Charge 1.7 nC Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.5 ns 18 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time Qrr IF=12A, dI/dt=500A/µs 9.7 Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 11.5 ns nC VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using