AON7510

AON7510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 75A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.25mΩ RDS(ON) (at VGS=4.5V) < 2.1mΩ 100% UIS Tested 100% Rg Tested • System/Load Swithch,Battery Swithch DFN 3.3x3.3 Top View Bottom View D Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7510 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.05mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2013 45 60 A EAS 90 mJ VSPIKE 36 V 46 Steady-State Steady-State W 18.5 4.1 RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 35.5 PD TA=25°C V 300 IDSM TA=70°C ±20 59 IDM TA=25°C Units V 75 ID TC=100°C C Maximum 30 -55 to 150 Typ 25 50 1.8 www.aosmd.com °C Max 30 60 2.7 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA gFS Forward Transconductance VDS=5V, ID=20A 1.2 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=20A Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 1.6 2.0 V 0.9 1.25 1.35 1.85 1.65 2.1 0.65 VGS=0V, VDS=15V, f=1MHz f=1MHz µA S 1 V 58 A 4500 pF 1400 pF 1310 pF Ω 1.8 2.7 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 100 140 nC Qg(4.5V) Total Gate Charge 60 84 nC VGS=10V, VDS=15V, ID=20A 0.9 mΩ mΩ 90 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V 5 VGS=10V, ID=20A Static Drain-Source On-Resistance Units 1 TJ=55°C RDS(ON) Max 30 VDS=30V, VGS=0V IDSS Coss Typ Qgs Gate Source Charge 10 nC Qgd Gate Drain Charge 40 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 58 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 37 ns IF=20A, dI/dt=500A/µs 23 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 49 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.7°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2013 www.aosmd.com Page 4 of 6 50 100 40 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: November 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6