AON7516

AON7516 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS RDS(ON) (at VGS=10V) < 4.5mΩ RDS(ON) (at VGS = 4.5V) < 6.8mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Bottom View Top View 30V 30A ID (at VGS=10V) D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current C V A 80 20 IDSM TA=70°C ±20 23 IDM TA=25°C Units V 30 ID TC=100°C Maximum 30 A 16 Avalanche Current C IAS 34 A Avalanche energy L=0.05mH C EAS 29 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Oct 2011 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 -55 to 150 Typ 30 60 4.2 www.aosmd.com °C Max 40 75 5 Units °C/W °C/W °C/W Page 1 of 6 AON7516 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A µA 5 1.2 0.8 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.8 100 nA 2.2 V 3.7 4.5 5.3 6.5 5.3 6.8 83 0.7 mΩ mΩ S 1 V 30 A 1229 pF 526 pF 83 pF 1.7 2.6 Ω 24 33 nC 12 17 nC 4 nC Gate Drain Charge 5.5 nC Turn-On DelayTime 7.0 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 4.8 ns 24.0 ns tf Turn-Off Fall Time 5.8 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 12.6 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 15.2 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using