AON7520

AON7520 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.8mΩ RDS(ON) (at VGS=4.5V) < 2.1mΩ RDS(ON) (at VGS=2.5V) < 3.1mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • Load switch, battery switch in portable devices DFN 3.3x3.3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.05mH VDS Spike Power Dissipation B C 100ns TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: May 2013 IAS 60 A EAS 90 mJ VSPIKE 36 V 83.3 Steady-State Steady-State W 33.3 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 38 PDSM TA=70°C A 48 PD TC=100°C V 200 IDSM TA=70°C ±12 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 16 45 1.1 www.aosmd.com °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7520 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS, ID=250µA VGS=10V, ID=20A Static Drain-Source On-Resistance 0.85 1.8 VGS=4.5V, ID=20A 1.66 2.1 VGS=2.5V, ID=20A 2.35 3.1 125 VSD Diode Forward Voltage IS=1A,VGS=0V 0.61 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance V 2.6 VDS=5V, ID=20A Crss µA 1.2 1.45 Forward Transconductance Output Capacitance ±10 2.05 TJ=125°C gFS Coss µA 5 0.5 VGS=0V, VDS=15V, f=1MHz S V 50 A 4175 pF 1505 pF pF Ω 1 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 77.5 105 nC Qg(4.5V) Total Gate Charge 37 50 nC VGS=10V, VDS=15V, ID=20A 0.5 mΩ 1 300 VGS=0V, VDS=0V, f=1MHz Units V 1 TJ=125°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40.7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6 nC 12.5 nC 6.5 ns 7 ns 58.5 ns 17.5 ns 20.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 May 2013 www.aosmd.com Page 4 of 6 AON7520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 80 Current rating ID(A) Power Dissipation (W) 100 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0 May 2013 www.aosmd.com Page 5 of 6 AON7520 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0 May 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6